2SC2712 [BL Galaxy Electrical]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管型号: | 2SC2712 |
厂家: | BL Galaxy Electrical |
描述: | Silicon Epitaxial Planar Transistor |
文件: | 总4页 (文件大小:174K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC2712
FEATURES
Pb
Lead-free
z
z
z
z
Low noise:NF=1dB (Typ.),10 dB(Max).
Complementary to 2SA1162.
High voltage and high current.
High hFE linearity.
APPLICATIONS
z
Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No.
2SC2712
Marking
Package Code
SOT-23
LO▪/LY▪/LG▪/LL▪
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
50
V
5
V
Collector Current -Continuous
Collector Dissipation
150
150
-55~150
mA
mW
℃
PC
Junction and Storage Temperature
Tj,Tstg
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC021
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC2712
Parameter
Symbol
Test conditions
MIN
60
50
5
TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=100μA,IE=0
IC=0.1mA,IB=0
IE=100μA,IC=0
VCB=60V,IE=0
VEB=5V,IC=0
V
V
V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
0.1
μA
μA
Emitter cut-off current
DC current gain
IEBO
0.1
hFE
VCE=6V,IC=2mA
70
80
700
0.25
Collector-emitter saturation
voltage
IC=100mA, IB=10mA
VCE(sat)
0.1
V
Transition frequency
Output capacitance
Noise Figure
VCE=10V, IC= 1mA
fT
MHz
pF
VCB=10V, IE=0,f=1kHz
VCE=6V,IC=0.1mA,f=1kHz
Cob
NF
2.0
1.0
3.5
10
dB
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
O
70-140
LO
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
Document number: BL/SSSTC021
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC2712
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC021
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC2712
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
E
K
B
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
G
H
J
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
2SC2712
3000/Tape&Reel
Document number: BL/SSSTC021
Rev.A
www.galaxycn.com
4
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